SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE TREATMENT DEVICE

摘要

It is possible to suppress initial oxidization of a substrate surface before oxidization treatment and remove a naturally oxidized film. The method includes a step for introducing a substrate into a treatment chamber, a step for supplying a gas containing oxygen and a gas containing hydrogen into the treatment chamber for oxidizing the surface of the substrate, and a step for carrying the substrate after the oxidization from the treatment chamber. In the oxidization step, the pressure in the treatment chamber is lowered than the atmospheric pressure. The hydrogen-containing gas is introduced firstly into the treatment chamber and then oxygen-containing gas is introduced while maintaining introduction of the hydrogen-containing gas.