发明名称 THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A thermoelectric semiconductor device and a method for manufacturing the same are provided to maximize the effect of thermionic emission by inserting a plurality of columns between two electrodes. CONSTITUTION: A thermoelectric semiconductor device includes a first electrode layer(15), a plurality of columns(13) and a second electrode layer(11). The plurality of columns is formed on the first electrode layer. The height of the plurality of columns is uniform. The second electrode layer is formed on the upper side of the columns. The second electrode layer is contacted to the columns.
申请公布号 KR20100028445(A) 申请公布日期 2010.03.12
申请号 KR20080087492 申请日期 2008.09.04
申请人 HANVISION CO., LTD.;LUMIENSE PHOTONICS INC. 发明人 ROBERT HANNEBAUER
分类号 H01L35/02 主分类号 H01L35/02
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