| 摘要 |
PURPOSE: A method for manufacturing a metal wiring in a semiconductor device is provided to prevent a short circuit between wirings due to a metal residue by performing a chemical mechanical polishing(CMP) process after a wiring layer is formed. CONSTITUTION: A first insulation layer(2) is deposited on a semiconductor substrate(1). A trench is formed in the first insulation layer. A first metal layer is deposited on the first insulation layer. A CMP process is performed on the first metal layer to form a first wiring layer(4a). A second insulation layer(5a) is deposited on the first insulation layer and the first wiring layer. The trench is formed in the second insulation layer. A second metal layer is deposited on the second insulation layer. The CMP process is performed on the second metal layer to form a second wiring layer.
|
