| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a thin-film transistor improved in electric characteristics and reliability, and to provide a method of manufacturing the semiconductor device with high mass productivity. <P>SOLUTION: An oxide semiconductor film containing In, Ga, Zn is used as a semiconductor layer, and an inverted stagger type (bottom gate structure) thin-film transistor is included. In the inverted stagger type thin-film transistor, a buffer layer is formed between the semiconductor layer and source and drain electrode layers. The buffer layer which has a carrier concentration higher than that of the semiconductor layer is formed intentionally between the source and drain electrode layers and the semiconductor layer, thus forming an ohmic contact. <P>COPYRIGHT: (C)2010,JPO&INPIT |
