发明名称 |
PLASMA TREATMENT APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To measure the plasma state of a plasma treatment apparatus with high sensitivity and high accuracy, and to perform treatment stably for a long period of time. <P>SOLUTION: The plasma treatment apparatus includes: a sheet-like electrode 21 for receiving high frequency signals from plasma 2; a signal line 31 connected to the electrode 21; a signal output means for outputting the high frequency signals from the electrode 21 to the outside; and a control means comprising a physical amount detection part 22 for detecting a target physical amount from the high frequency signals, a measurement data storage part 24 for storing measurement data in the past or the like, a measurement processing part 23 for comparing the measurement data in the past with new measurement data detected in the detection part 22 and outputting the signal of the variation amount of the plasma and a control part 16 for operating an apparatus parameter corresponding to the signal from the measurement processing part 22 and executing control so as to stabilize the plasma state. The sheet-like electrode 21 and the signal line 31 are formed between dielectric protective films formed in at least two layers on the surface of the inner wall/the surface of the inner cylinder 5 of a vacuum treatment chamber 1 in contact with the plasma 2 and the sheet-like electrode 21 outputs an electric field and a magnetic field. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010056114(A) |
申请公布日期 |
2010.03.11 |
申请号 |
JP20080216344 |
申请日期 |
2008.08.26 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
TETSUKA TSUTOMU;FURUSE MUNEO |
分类号 |
H01L21/3065;C23C16/52;H05H1/00;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|