NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

Disclosed is a nitride semiconductor light-emitting element wherein a nitride semiconductor layer (103, 303, 603, 1203), a p-type nitride semiconductor layer (104, 304, 604, 1204) and an active layer (105, 305, 605, 1205) are sequentially arranged on an n-type nitride semiconductor layer (102, 201, 302, 601, 1201).  Also disclosed is a semiconductor light-emitting element wherein a first lower layer (1402, 1502, 1602, 1702), a second lower layer (1404, 1504, 1604, 1704), an active layer (1405, 1505, 1605, 1705) and an upper layer (1406, 1506, 1606, 1706) having a thickness of not more than 40 nm are sequentially arranged on a substrate (1401, 1501, 1601, 1701), and the interface of a second electrode for n-type conductive substrate (1408, 1508, 1608, 1708), which is in contact with the upper layer (1406, 1506, 1606, 1706), contains a metal in which a surface plasmon can be excited by the light generated in the active layer (1405, 1505, 1605, 1705).