发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 <p>PURPOSE: A thin film transistor array substrate and a method for manufacturing the same are provided to maintain a driving capability by forming a dummy thin film transistor structure. CONSTITUTION: A plurality of thin film transistors is formed on an insulation substrate(310). Each of the thin film transistors includes a gate electrode(321), a semiconductor layer(330), and a source electrode(361) and a drain electrode(362). A semiconductor layer is formed on the gate electrode. At least one of the thin film transistors is a dummy thin film transistor. In the dummy thin film transistor, the semiconductor layer between the source electrode and the drain electrode is removed.</p>
申请公布号 KR20100027824(A) 申请公布日期 2010.03.11
申请号 KR20080086890 申请日期 2008.09.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KYUNG WOOK;LEE, JONG HWAN;KHO, YOUNG WOON;PARK, JAE HYUN
分类号 H01L29/786 主分类号 H01L29/786
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