发明名称 |
THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor array substrate and a method for manufacturing the same are provided to maintain a driving capability by forming a dummy thin film transistor structure. CONSTITUTION: A plurality of thin film transistors is formed on an insulation substrate(310). Each of the thin film transistors includes a gate electrode(321), a semiconductor layer(330), and a source electrode(361) and a drain electrode(362). A semiconductor layer is formed on the gate electrode. At least one of the thin film transistors is a dummy thin film transistor. In the dummy thin film transistor, the semiconductor layer between the source electrode and the drain electrode is removed.</p> |
申请公布号 |
KR20100027824(A) |
申请公布日期 |
2010.03.11 |
申请号 |
KR20080086890 |
申请日期 |
2008.09.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KYUNG WOOK;LEE, JONG HWAN;KHO, YOUNG WOON;PARK, JAE HYUN |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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