SEMICONDUCTOR MULTILAYER STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor multilayer structure which has a GaN layer as a surface layer and hardly causing cracks due to thermal expansion.

SOLUTION: The semiconductor multilayer structure includes a ZnO substrate 10 and a group III-V nitride epitaxial layer 11 which is directly formed on the substrate 10 by epitaxial growth. The group III-V nitride epitaxial layer 11 includes from a first layer 12 to an n-th layer 14 having different compositions, wherein n is an integer of ≥3 and the n-th layer 14 is substantially composed of GaN.

COPYRIGHT: (C)2010,JPO&INPIT