发明名称 THERMAL PROCESSING APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thermal processing apparatus which has high cooling effect and can shorten cycle time of product manufacture. <P>SOLUTION: A coil heater 14 is energized and an atmosphere temperature is raised to near 800°C so as to form a coat on a surface of a semiconductor wafer W. When a heating processing is terminated, a cooling medium such as water is immediately supplied to cylindrical space S as cooling space or through-holes 18 and the atmosphere temperature is dropped to near 400°C. The semiconductor wafer W after the processing is discharged in an inverse procedure, and a new unprocessed wafer is put in a reaction chamber 2. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010056287(A) 申请公布日期 2010.03.11
申请号 JP20080219608 申请日期 2008.08.28
申请人 TOKYO OHKA KOGYO CO LTD 发明人 MIYAMOTO HIDENORI
分类号 H01L21/22;C23C16/44;H01L21/31;H01L21/324 主分类号 H01L21/22
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