| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for production of high-purity silicon, by which impurities in metal Si, particularly, B and P, and moreover, Al, Ca, Cr, Zr, Ta, Ti, V, Mn or the like can be simultaneously decreased in one step, no high-vacuum atmosphere is required since a general open furnace to the atmosphere is used, no expensive equipment such as an electron beam or a plasma torch is required, which can significantly reduce the amount of capital investment, and thereby, metal Si with reduced impurities of B, P as well as Al, Ca, Cr, Zr, Ta, Ti, V, Mn or the like can be inexpensively obtained. <P>SOLUTION: The method for production of high purity silicon for reducing impurities in silicon comprises: heating and melting silicon containing impurities or heating to separately melt silicon containing impurities and a solid material containing an additive for purifying impurities; and blowing a gas containing nitrogen atoms and hydrogen atoms as a gas for purifying impurities into the silicon in a melted state or into the melt containing the silicon and the additive for purifying impurities. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
