| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a nitride body, by which a group III nitride single crystal can continuously be grown in a high quality state without being easily cracked even when the crystal grows thick. Ž<P>SOLUTION: In the production method of the group III nitride single crystal, the group III nitride single crystal 3b is continuously grown on a seed substrate 3a by a vapor phase growth method to obtain a bulk single crystal 3b. Wherein, a controlled temperature externally applied to grow the crystal is elevated according to the increase in the thickness of the grown single crystal 3b. The vapor phase growth method is a hydride vapor phase growth method. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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