发明名称 |
Semiconductor Memory Device and Semiconductor Device |
摘要 |
An anti-fuse memory device includes a plurality of word lines, a plurality of bit lines, and a memory cell provided with respect to an intersecting portion of any of the plurality of word lines and any of the plurality of bit lines. Memory cell includes a PIN diode and an anti-fuse. An anode of the PIN diode is electrically connected to any of the bit lines. A cathode of the PIN diode is electrically connected to a first terminal of the anti-fuse. A second terminal of the anti-fuse is electrically connected to any of the word lines. The anti-fuse includes a silicon layer and an insulating layer which are interposed between electrodes.
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申请公布号 |
US2010061136(A1) |
申请公布日期 |
2010.03.11 |
申请号 |
US20090552749 |
申请日期 |
2009.09.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA JUN;MIYAGUCHI ATSUSHI |
分类号 |
G11C17/00;G11C17/06 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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