发明名称 METHOD OF FORMING AN INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
摘要 In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
申请公布号 US2010060349(A1) 申请公布日期 2010.03.11
申请号 US20080208537 申请日期 2008.09.11
申请人 ETTER STEVEN M;LIU MINGJIAO;SALIH ALI;MARREIRO DAVID D;SHASTRI SUDHAMA C 发明人 ETTER STEVEN M.;LIU MINGJIAO;SALIH ALI;MARREIRO DAVID D.;SHASTRI SUDHAMA C.
分类号 H03K5/00;H01L21/8222 主分类号 H03K5/00
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