| 摘要 |
A method for manufacturing a semiconductor device includes the steps of forming a P-type region on a surface of a semiconductor substrate, forming at least one Al electrode on the P-type region, forming an interlayer film in contact with the at least one Al electrode, the interlayer film being of a material which is less reactive with Si than is Al, and forming a semi-insulating film on the interlayer film, the semi-insulating film containing Si.
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