发明名称 |
Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets |
摘要 |
The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
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申请公布号 |
US2010059147(A9) |
申请公布日期 |
2010.03.11 |
申请号 |
US20080235427 |
申请日期 |
2008.09.22 |
申请人 |
SEGAL VLADIMIR M;YI WUWEN;FERRASSE STEPHANE;WU CHI TSE;STROTHERS SUSAN D;ALFORD FRANK A;WILLETT WILLIAM B |
发明人 |
SEGAL VLADIMIR M.;YI WUWEN;FERRASSE STEPHANE;WU CHI TSE;STROTHERS SUSAN D.;ALFORD FRANK A.;WILLETT WILLIAM B. |
分类号 |
B21C23/00;C22F1/08;B22D7/00;C22F1/00;C22F1/04;C23C14/34 |
主分类号 |
B21C23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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