发明名称 Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs)
摘要 A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.
申请公布号 US2010061417(A1) 申请公布日期 2010.03.11
申请号 US20040936218 申请日期 2004.09.07
申请人 SUN DECAI;FLOYD PHIL;FAN WENJUN 发明人 SUN DECAI;FLOYD PHIL;FAN WENJUN
分类号 H01S5/00;H01L21/30 主分类号 H01S5/00
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