| 摘要 |
PURPOSE: A light induced chemical vapor deposition apparatus is provided to improve the yield and productivity of a semiconductor substrate by including a wide process window and depositing a superior quality of thin film on the semiconductor substrate. CONSTITUTION: A reaction chamber(280) provides a reaction space for a substrate(260) which is placed on a substrate support stand(270). A reactive gas supply unit(230) supplies a reactive gas in the reaction space. A light source unit(210) generates a light. A light irradiation unit(222) decomposes the light by exciting the reactive gas. A charge beam irradiation device(300) forms a beam irradiation unit in a path for the reactive gas.
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