INSULATING FILM FOR CAPACITOR, CAPACITOR ELEMENT, METHOD OF MANUFACTURING INSULATING FILM FOR CAPACITOR, AND SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To attain high relative permittivity as an insulating film for a capacitor, also in a strontium titanate (STO) film which is thinned to nearly 10 nm. Ž<P>SOLUTION: The STO film is employed such that the spectrum ratio of strength (200)/(111) of a crystal plane orientation (200) to a spectrum of (111) measured with X-ray diffraction method exists in the range of 1.0-2.3. The STO film is acquired in such a way that after depositing titanium oxide (TiOx) film in a predetermined thickness, deposition of the STO film in an amorphous state is carried out, thus making the STO film into a crystallized state by heat treating in inactive gas atmosphere. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž