| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light emitting element array in which a fabricating process is shortened. <P>SOLUTION: The method of manufacturing the light emitting element array includes the processes of: (1) forming a group III nitride semiconductor layer, including an optical semiconductor layer 2 comprising a semiconductor layer 2b of a first conductivity type, a light emitting layer 2c, and a semiconductor layer 2d of a second conductivity type, on a substrate 1 for growth; (2) exposing the group III nitride semiconductor layer differing in type from one principal surface of the group III nitride semiconductor layer by removing a portion of the one principal surface, and forming electrodes on the semiconductor layers of the first conductivity type and second conductivity type respectively; and (3) removing the substrate for growth after bonding the electrodes formed on one-side principal surfaces of the semiconductor layers to electrodes formed on a principal surface of a support substrate at positions opposed to the electrodes. <P>COPYRIGHT: (C)2010,JPO&INPIT |
