| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make it hard to generate a resist residue when peeling off a plating resist film for forming a column-shaped electrode and to reduce the number of processes in a semiconductor apparatus called CSP. <P>SOLUTION: A two-layer structure metal film for forming wiring 7a consisting of a titanium film and a copper film formed by spattering is formed on the whole upper surface of a protection film 5. Then, a plating resist film for forming column-shaped electrode 23 consisting a negative type dry film resist is patterned on an upper surface of the metal film for forming wiring 7a. Further, electrolytic plating of copper which uses the metal film for forming wiring 7a as a plating current path is carried out to form a column-shaped electrode 8 on the upper surface of the metal film for forming wiring 7a in an opening 24 of the plating resist film for forming column-shaped electrode 23. Furthermore, the plating resist film for forming column-shaped electrode 23 is peeled off. In this case, since the plating resist film for forming column-shaped electrode 23 is formed on the upper surface of the metal film for forming wiring 7a which has a very high planarity, it is hard to generate a resist residue of the plating resist film for forming the column-shaped electrode 23, and the number of processes can be reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
