| 摘要 |
Methods for forming a semiconductor device include forming self-aligned trenches, in which a first set of trenches is used to align a second set trenches. Methods taught herein can be used as a pitch doubling technique, and may therefore enhance device integration. Further, employing a very thin CMP stop layer, and recessing surrounding materials by about an equal amount to the thickness of the CMP stop layer, provides improved planarity at the surface of the device.
|
