| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing carbon nanotube oriented and grown with high density in one direction on a substrate in such a state that the growth position is controlled. Ž<P>SOLUTION: The method of producing the carbon nanotube is carried out by forming a prescribed pattern structure comprising a metallic based catalyst for forming carbon nanotube on the surface of a sapphire single crystalline substrate having R-plane as a crystal face of the surface and orienting and growing the carbon nanotube from the pattern structure by a CVD method in a direction opposed at 180° to the positive c-axis projecting direction on the R-plane. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
