| 摘要 |
It is an object to provide a homogeneous semiconductor film in which variation in the size of crystal grains is reduced. Alternatively, it is an object to provide a homogeneous semiconductor film and to achieve cost reduction. By introducing a glass substrate over which an amorphous semiconductor film is formed into a treatment atmosphere set at more than or equal to a temperature that is needed for crystallization, rapid heating due to heat conduction from the treatment atmosphere is performed so that the amorphous semiconductor film is crystallized. More specifically, for example, after the temperature of the treatment atmosphere is increased in advance to a temperature that is needed for crystallization, the substrate over which the semiconductor film is formed is put into the treatment atmosphere.
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