发明名称 METHOD FOR PRODUCING SILICON
摘要 Disclosed is a novel method for producing high-purity silicon at low cost. Particularly disclosed is a novel method for producing high-purity silicon, which can be suitably used as a raw material for solar cells, at low cost. Specifically, a method for producing silicon wherein silica is subjected to molten salt electrolysis in an electrolysis vessel comprises, in the following order, a step (1) wherein the silicon content in an silicon-containing alloy, which is in a liquid phase at the electrolysis temperature, is increased by using the alloy as the cathode and performing electrolysis; a step (2) wherein the silicon-containing alloy serving as the cathode is taken out of the electrolysis vessel before it reaches the concentration at which silicon begins to precipitate at the electrolysis temperature; a step (3) wherein silicon is solidified by cooling the taken-out silicon-containing alloy within the temperature range higher than the eutectic point but lower than the electrolysis temperature; and a step (4) wherein the solidified silicon is collected.
申请公布号 US2010059118(A1) 申请公布日期 2010.03.11
申请号 US20070302466 申请日期 2007.05.25
申请人 SAEGUSA KUNIO 发明人 SAEGUSA KUNIO
分类号 H01L31/00;C01B33/02;C25B1/00 主分类号 H01L31/00
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