发明名称 SEMICONDUCTOR FABRICATION DEVICE COMPONENT AND SEMICONDUCTOR FABRICATION DEVICE
摘要 <p>Disclosed are a semiconductor fabrication device component and a compound semiconductor fabrication device component, provided with a component body and a sprayed coating formed on the surface of the aforementioned component body by spraying nitride particles. The semiconductor fabrication device component and the compound semiconductor fabrication device component are characterized by the nitride particles being deposited in an unmelted state to constitute 90% by mass of the aforementioned sprayed coating. In a sprayed coating formed by rapid solidification of melted fused particles, many microcracks occur in the particles, and remain in a distorted state, so particles are produced as dust from the sprayed coating on the component in a plasma discharge process. Thus, the present invention provides a semiconductor fabrication device component and a compound semiconductor fabrication device component that reliably and effectively suppress the production of the aforementioned dust.</p>
申请公布号 WO2010027073(A1) 申请公布日期 2010.03.11
申请号 WO2009JP65589 申请日期 2009.09.07
申请人 KABUSHIKI KAISHA TOSHIBA;TOSHIBA MATERIALS CO., LTD.;SATO, MICHIO;NAKAMURA, TAKASHI 发明人 SATO, MICHIO;NAKAMURA, TAKASHI
分类号 C23C4/10;H01L21/3065;H01L21/205 主分类号 C23C4/10
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