| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a driving method of a semiconductor device, in which dispersion in the characteristics of TFTs configuring pixels hardly influences the luminance of light emitting elements and a signal electric current write-in operation is performed at high speed. <P>SOLUTION: The driving method of a semiconductor device is used for a semiconductor device which includes a driver TFT and a conversion driver TFT having gates electrically connected to each other, wherein the first terminal of the driver TFT is electrically connected to the light emitting element, the second terminal of the driver TFT is electrically connected to the first terminal of the conversion driver TFT, the second terminal of the conversion driver TFT is electrically connected to a current supply line. In the driving method, during a first period, the driver TFT is in a conductive state, during a second period, the driver TFT and the conversion driver TFT are in a non-conductive state. <P>COPYRIGHT: (C)2010,JPO&INPIT |
