| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group II-VI compound semiconductor element which has a p-type clad layer having large electric conductivity, and to provide a method of manufacturing the same. Ž<P>SOLUTION: A superlattice structure in an upper clad layer 16 has intermediate layers 16C and 16D (ZnSe layer or ZnTe layer) arranged between an upper clad layer 16A (MgSe layer) and a second upper clad layer 16B (BeZnTe layer) laminated alternately. Further, Zn atoms are arranged on interfaces of the intermediate layers 16C, 16D (ZnSe layer) and the second upper clad layer 16B (BeZnTe layer). Consequently, when the upper clad layer 16 is formed, Be and Se which have specifically high reactivity never come into contact with each other. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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