| 摘要 |
A semiconductor memory device includes a memory cell array, a redundant element, an address designating section for selecting one address from a plurality of addresses as a redundant address according to changeover signals, a decoder circuit for selecting the redundant element at the time when the address inputted from the outside matches the redundant address selected by the address designating section, and a test-mode setting circuit that is configured to change the redundant address allocated to the redundant element by changing the changeover signal according to the input from the outside.
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