发明名称 GATE DRIVE CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To make reference potential higher than bus voltage having a simple circuitry, especially of a high-side gate drive circuit in an inverter adopting a bidirectional switch, in which when gate drive circuits are formed, reference potential is different between respective gate terminals. <P>SOLUTION: The gate drive circuit is applied to a half bridge circuit in which bidirectional switches 1 having four operation modes, by respectively turning on and off a first gate terminal 2 and a second gate terminal 3 that are connected in series; and the gate drive circuit includes a hold circuit 19 that keeps on the first gate terminal 2. It is possible to realize a gate drive circuit of simple circuitry, in which the first gate terminal 2 is kept on and the second gate terminal 3 is PWM-controlled, and low-loss driving can be implemented at low cost. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010057263(A) 申请公布日期 2010.03.11
申请号 JP20080219167 申请日期 2008.08.28
申请人 PANASONIC CORP 发明人 MORIMOTO ATSUSHI;SHIRAISHI MATSUO
分类号 H02M7/48;H01L21/337;H01L21/338;H01L27/095;H01L29/778;H01L29/80;H01L29/808;H01L29/812;H02M1/08 主分类号 H02M7/48
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