METHOD FOR MANUFACTURING SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To prevent oxygen from being taken in a single-crystal semiconductor layer in laser beam irradiation even when crystallinity of the single-crystal semiconductor layer is recovered by irradiation with a laser beam; and to make substantially equal or reduce the concentration of oxygen included in the single-crystal semiconductor layer after the laser beam irradiation relative to that before the laser beam irradiation.

SOLUTION: A method of manufacturing an SOI substrate includes a process of recovering the crystallinity of the single-crystal semiconductor layer (recrystallization) by irradiating a single-crystal semiconductor layer formed on a base substrate by being stuck thereon with a laser beam. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

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