| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses bump cracks. <P>SOLUTION: The semiconductor device includes: a semiconductor substrate 200; and a solder bump 270, formed on the semiconductor substrate 200, wherein there does not exist crystal grain boundary extending more than one third of the length of its own diameter dimension from the peripheral surface ranging from an end 112 connected to the semiconductor substrate 200 to a side surface 110. By this arrangement, there does not exist the crystal grain boundary extending from the peripheral surface which causes the bump cracks, thus suppressing the bump cracks. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
