| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a thin film excellent in productivity and mass productivity capable of stably achieving long-term continuous film formation with a reduced number of particles, while favorably reproducing a film-thickness distribution, a composition distribution and a film-formation rate. SOLUTION: The thin-film manufacturing apparatus is a CVD device configured to introduce a film forming gas into a reaction chamber through a shower head from a top of a reaction chamber that is a reaction space and form a film on a heat substrate. An upper reaction space is formed of a substrate stage that is neither rotated nor lifted, a shower head and a contamination shield in which a concentric gap is formed between the contamination shield and the substrate stage to serve as a gas-exhausting passage, so that an inert gas can flow along the contamination shield from an upper portion of the gas-exhausting passage. A lower space is formed at a secondary side of the gas-exhausting passage. COPYRIGHT: (C)2010,JPO&INPIT
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