SILICON CARBIDE SINGLE CRYSTAL INGOT, SUBSTRATE OBTAINED FROM THE SAME, AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide an SiC single crystal ingot from which a high-quality substrate with few dislocation defects is obtained, and to provide a substrate obtained from the same and an epitaxial wafer. SOLUTION: The SiC single crystal ingot is used for power devices and characterized in that it contains donor type impurities in a concentration of from 2×1018to 6×1020cm-3and acceptor type impurities in a concentration of from 1×1018to 5.99×1020cm-3, in the silicon carbide single crystal, the concentration of the donor type impurities is higher than that of the acceptor type impurities, the difference between the concentrations of the donor type impurities and acceptor type impurities is 1×1018to 5.99×1020cm-3, and the resistivity is≤0.04Ω-cm. The substrate obtained from the SiC single crystal ingot and the epitaxial wafer are also provided. COPYRIGHT: (C)2010,JPO&INPIT