| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a capacitance insulating film from deteriorating owing to hydrogen and to prevent a bit line from being a thinner film owing to etching in a semiconductor memory device having a COB (Capacitor Over Bit line) structure. Ž<P>SOLUTION: The semiconductor memory device includes a MOS transistor 320, the bit line 207 provided above a memory region 310 and electrically connected to an impurity diffusion layer 203b, and the capacitance insulating film 213 including a ferroelectric or high dielectric, and further includes a capacitor 215 provided at a position above the bit line 207, a lower hydrogen barrier film 210 covering a lower side of the capacitor 215, an upper hydrogen barrier film 218 covering side faces and a top side of the capacitor 215, wiring 221 formed over a peripheral circuit region 300, and a conductive layer 203a formed at a position lower than the bit line 207 and extending from the memory region 310 to the peripheral circuit region 300 when viewed from above to electrically connect the bit line 207 and wiring 221 to each other. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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