| 发明名称 |
METHOD OF DEPOSITING AMORPHOUS SILICON CARBIDE FILM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of efficiently and inexpensively depositing an amorphous silicon carbide (a-SiC<SB>x</SB>:H) film having the hardness necessary for a coating material of a cutting tool or the like by a simple process. Ž<P>SOLUTION: When depositing an amorphous silicon carbide film on a substrate by using raw material gas containing silicon compounds by a microwave plasma CVD (Chemical Vapor Deposition) method, negative high frequency bias voltage (-V<SB>RF</SB>) is continuously applied to the substrate. Preferably, the output of the microwave is 50-120 W, and the negative high frequency bias voltage (-V<SB>RF</SB>) satisfies inequalities 60 V<-V<SB>RF</SB><120 V. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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| 申请公布号 |
JP2010053380(A) |
申请公布日期 |
2010.03.11 |
| 申请号 |
JP20080217770 |
申请日期 |
2008.08.27 |
| 申请人 |
NAGAOKA UNIV OF TECHNOLOGY |
发明人 |
ITO HARUHIKO;SHINOHARA AKIO;SAITO HIDETOSHI |
| 分类号 |
C23C16/42;B23B27/14;B23P15/28;C23C16/511 |
主分类号 |
C23C16/42 |
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