| 发明名称 |
METHOD OF MANUFACTURING METAL OXIDE LAYER |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the dielectric constant of a metal oxide layer by reducing an amorphous layer on a surface of the metal oxide layer. Ž<P>SOLUTION: A method of manufacturing a metal oxide layer includes: a step of decomposing a precursor layer of the metal oxide layer to form the metal oxide layer; a step of irradiating the metal oxide layer by laser to crystallize the metal oxide layer; and an annealing step of irradiating the crystallized metal oxide layer at intervals of 10 to 300 Hz by pulse laser wherein the irradiation fluence of the first pulse is 60 to 100 mJ/cm<SP>2</SP>and that of the last pulse is ≤10 mJ/cm<SP>2</SP>, while reducing irradiation fluences of respective pulses so that a reduction speed V of irradiation fluence satisfies -150≤V [mJ/(cm<SP>2</SP>min)]<0. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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| 申请公布号 |
JP2010056454(A) |
申请公布日期 |
2010.03.11 |
| 申请号 |
JP20080222471 |
申请日期 |
2008.08.29 |
| 申请人 |
TDK CORP;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY |
发明人 |
TSUCHIYA TETSUO;YAMASHITA YUKI |
| 分类号 |
H01L21/316;H01G4/33;H01L21/822;H01L21/8246;H01L27/04;H01L27/105 |
主分类号 |
H01L21/316 |
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