| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a leakage current of a PN-junction diode for protecting a longitudinal transistor. Ž<P>SOLUTION: A semiconductor device is manufactured by the steps of: preparing an SOI substrate made by laminating a first single crystal semiconductor substrate and a second single crystal semiconductor substrate with intervening an oxide film; forming a PN-junction diode at the side of the first single crystal semiconductor substrate; removing part of the first single crystal semiconductor substrate and part of the oxide film so as to expose the second single crystal semiconductor substrate at its area in which a longitudinal transistor is formed; forming the longitudinal transistor in the second single crystal semiconductor substrate; and electrically connecting the PN-junction diode to the longitudinal transistor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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