| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality semiconductor device suppressed in warpage in a heat treatment process with high productivity during dicing, and to provide the semiconductor device manufactured by the method. Ž<P>SOLUTION: The method for manufacturing the semiconductor device includes: a step of forming a plurality of functional elements arranged in a matrix shape on a semiconductor substrate; a step of forming a photosensitive resin film on the surface on which functional elements of the wafer are formed; a step of forming grooves in a lattice like shape on the photosensitive resin film so that the plurality of functional elements formed in the matrix shape are demarcated; a step of bonding the wafer and a support substrate having almost the same size as the wafer via the photosensitive resin film; and a step of dicing the laminated board in which the wafer and the support substrate are bonded at each groove of the photosensitive resin film to divide the plurality of functional elements into discrete pieces. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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