| 摘要 |
PURPOSE: An erase and a soft-programming method of a non-volatile memory device are provided to prevent the cell current of a dummy cell from reducing without performing a soft-program operation to the dummy cell. CONSTITUTION: An erase operation is performed to a dummy cell and memory cells(310). An erase verification operation is performed to the cells(320). A soft-program operation is performed to the memory cells(330). The soft-program verification operation is performed to the memory cells(340). The dummy cell includes a drain side dummy cell connected between the memory cell and a drain selection transistor and a source side dummy cell connected between the memory cell and a source selection transistor. |
