| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image sensing device which can improve sensitivity, and sufficiently prevent the charge leakage between abutting photodiodes even if an element isolation area is narrow. Ž<P>SOLUTION: In the solid-state image sensing device, a pixel area having a plurality of light receiving sections arranged and a peripheral circuit area abutting the pixel area are provided. The solid-state image sensing device includes: a semiconductor substrate 102 of a primary conduction type or secondary conduction type; a first semiconductor layer 103 of the primary conduction type that is provided on the semiconductor substrate 102 and has a lower impurity concentration than the semiconductor substrate 102; first impurity areas 104 of the secondary conduction type that are provided on the top of the first semiconductor layer 103 in the pixel area; second impurity areas 105 of the primary conduction type that are provided between the first impurity areas 104 adjacent in the pixel area and in the peripheral circuit area; and third impurity areas 106 of the primary conduction type that extend from directly under the second impurity areas 105 toward the semiconductor substrate 102 in the pixel area. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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