METHOD OF MANUFACTURING COMPOUND EPITAXIAL LAYER, AND SEMICONDUCTOR LAMINATE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound epitaxial layer that reduces formation of a droplet lowering the manufacturing yield and also has excellent crystallinity at the same time. Ž

SOLUTION: The present invention relates to the method of forming the compound epitaxial layer on a ZnO substrate. Crystal growth is carried out by supplying elements for forming the compound epitaxial layer, such that (a) a growth surface of the ZnO substrate has an angle of ≥10° to a ä0001} plane and (b) all or some of the elements for forming the compound epitaxial layer are intermittently supplied to the growth surface on the substrate under conditions of 1×10-6sec≤Toff≤1×10-2sec and 1×10-6sec≤Ton≤1×10-2, where Ton (sec) is an arbitrary supply duration in an intermittent supply sequence and Toff (sec) is a supply pause time up to next element supply. Ž

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