| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide wiring that suppresses oxidation of a copper wiring layer and diffusion of copper while securing excellent shape controllability. Ž<P>SOLUTION: A seed layer 52 formed on a metal diffusion preventive film 51 is selectively removed using resist. After the resist is removed, the copper wiring layer 53 and a metal mask layer 54 disposed on the copper wiring layer 53 are formed, in an electroless plating method, while covering the seed layer 52. The metal diffusion preventive layer 51 is selectively removed using the metal mask layer 54. While the excellent shape controllability is secured, the copper wiring layer 53 is prevented from having its surface roughened owing to etching etc., during the formation of the metal diffusion preventive film 51, thereby suppressing the oxidation of the copper wiring layer 53 and the diffusion of copper. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
