| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor image pickup element capable of suppressing a white spot and stably forming a region. Ž<P>SOLUTION: The semiconductor image pickup element includes: a first conductivity-type semiconductor region 21 formed on a semiconductor substrate 30; a transfer gate 23 formed on the semiconductor substrate 30; a photodiode region 34 formed on the first conductivity-type semiconductor region 21; and a second conductivity-type floating diffusion region 31. In this semiconductor image pickup element, an insulation layer 27 is formed on the transfer gate 23 and the photodiode region 34, and a contact plug 28 piercing through the insulation layer 27 and connected to the transfer gate 23 is formed. Furthermore, a conductor layer 29 connected to the contact plug 28 and covering the insulation layer 27 from the gate electrode 23 to the photodiode region 34 is formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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