| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an amplification type solid state imaging device for reducing crosstalk between pixels with visible rays of light, and for increasing sensitivity with infrared rays of light by extending the depletion layer of each pixel to the original depth. Ž<P>SOLUTION: The amplification type solid state imaging device includes: a photoelectric conversion element PD<SB>ij</SB>having a first conductive charge generation layer 12 whose impurity concentration is 10<SP>14</SP>cm<SP>-3</SP>or less and is 10<SP>11</SP>cm<SP>-3</SP>or more and a second conductive surface embedded region 13 embedded in a portion of the upper part of the charge generation layer 12; a first conductive transfer channel formation well 19 and an amplifier circuit formation well 18 embedded in the other portion of the upper part of the charge generation layer 12; a charge detection region 16 configured of the second conductive semiconductor region embedded in a portion of the upper part of the transfer channel formation well 19 to which signal charge is transferred from the photoelectric conversion element; and a block layer 21 arranged at the bottoms of the transfer channel formation well 19 and the amplifier circuit formation well 18, and configured of the second conductive semiconductor region arranged so as to be brought into contact with the charge generation layer 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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