An edge termination structure includes a final dielectric trench containing permanent charge. The final dielectric trench is surrounded by first conductivity type semiconductor material (doped by lateral outdiffusion from the trenches), which in turn is laterally surrounded by second conductivity type semiconductor material.
申请公布号
WO2010027727(A2)
申请公布日期
2010.03.11
申请号
WO2009US54739
申请日期
2009.08.24
申请人
MAXPOWER SEMICONDUCTOR INC.;PAUL, AMIT;DARWISH, MOHAMED, N.