发明名称 DEVICES CONTAINING PERMANENT CHARGE
摘要 An edge termination structure includes a final dielectric trench containing permanent charge. The final dielectric trench is surrounded by first conductivity type semiconductor material (doped by lateral outdiffusion from the trenches), which in turn is laterally surrounded by second conductivity type semiconductor material.
申请公布号 WO2010027727(A2) 申请公布日期 2010.03.11
申请号 WO2009US54739 申请日期 2009.08.24
申请人 MAXPOWER SEMICONDUCTOR INC.;PAUL, AMIT;DARWISH, MOHAMED, N. 发明人 PAUL, AMIT;DARWISH, MOHAMED, N.
分类号 H01L21/336;H01L21/265 主分类号 H01L21/336
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