JUNCTION TERMINATION EXTENSION WITH CONTROLLABLE DOPING PROFILE AND CONTROLLABLE WIDTH FOR HIGH-VOLTAGE ELECTRONIC DEVICES
摘要
<p>Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor.</p>
申请公布号
WO2010027990(A1)
申请公布日期
2010.03.11
申请号
WO2009US55645
申请日期
2009.09.02
申请人
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY;IMHOFF, EUGENE, A.;KUB, FRANCIS, J.;HOBART, KARL, D.
发明人
IMHOFF, EUGENE, A.;KUB, FRANCIS, J.;HOBART, KARL, D.