METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device and an apparatus for processing a substrate are provided to form a nitride silicon layer including excessive silicon by optimizing the composition ratio of silicon and nitrogen. CONSTITUTION: Dichlorosilane is applied to a substrate to form a silicon layer under a CVD reaction condition. Ammonia is applied to the substrate under a non-plasma atmosphere. Nitration is performed by the silicon layer and the ammonia. There is an insufficient amount of ammonia when thermal-nitration is performed on the silicon layer. A nitride silicon layer including excessive silicon is formed.