| 摘要 |
PURPOSE: A method for manufacturing the air gap of a semiconductor device is provided to reduce the effect of a resistive capacitive delay and a signal distortion in a driving operation of the device by improving an interlayer dielectric material in order to reduce capacitance between metal wirings. CONSTITUTION: A thin film including silicon(102) is deposited on a semiconductor substrate(100). A plasma polymer organic thin film is deposited on the thin film including silicon and a planarization process is performed. A low dielectric material layer is formed after the planarization process. The low dielectric material layer is formed into a porous silicon thin film(108) through a heat treatment and a plasma treatment process. An air gap(112) is formed in the gap fill space of the plasma polymer organic thin film.
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