| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents the degradation of wiring reliability, which is caused by a reaction product produced during an etching process. SOLUTION: The method of manufacturing the semiconductor device having a spacer on a sidewall of an electrode includes a step to form an insulating membrane covering the electrode, a step to dry-etch the insulating membrane for forming the spacer on the sidewall of the electrode, a step to remove a reaction product produced by the dry etching, with plasma discharge of hydrogen simple substance gas or gas containing nitrogen, and a step to over-etch, at least, the insulating membrane after the reaction products are removed. COPYRIGHT: (C)2010,JPO&INPIT
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