发明名称 |
Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions |
摘要 |
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
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申请公布号 |
US2010062562(A1) |
申请公布日期 |
2010.03.11 |
申请号 |
US20080208886 |
申请日期 |
2008.09.11 |
申请人 |
SMYTHE JOHN;SRINIVASAN BHASKAR;ZHANG MING |
发明人 |
SMYTHE JOHN;SRINIVASAN BHASKAR;ZHANG MING |
分类号 |
H01L45/00;H01L21/20;H01L21/263;H01L21/336 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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